PE8810 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product i.
It is ESD protested.
General Features
* VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Ra.
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